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تحضير ودراسة خصائص ZnO : Al على قواعد مختلفه كمتحسس غازي == Preparing and studying characterization of ZnO : Al with different substrates for gas sensor

Author name: ضيدان خلف كافي
Supervisor name: رعد سعدون صبري
General topic: Physics
Degree: Master
Language: English
University location: Baghdad
First pages:
Abstract: تم في هذا البحث دراسة الخصائص البصرية والكهربائية والتحسسية لاغشية (ZnO) النقية والمشوبة بالالمنيوم (Al) بالنسب (1%,3%) المحضرة بطريقة الرش الكيميائي الحراري, والتي رسبت على قواعد زجاجية وسليكون وسليكون مسامي بدرجة حرارة (773±10oK)., وبسمك (350±10)nm.ولقد تم تحضير السليكون المسامي بواسطة الانوده الكهروكيميائيه على رقائق من السليكون نوع p type (100)بينت فحوصات نمط الحيود للاشعة السينية (XRD) لتشخيص طبيعة تبلور الاغشية المحضرة, حيث اظهرت النتائج ان جميع الاغشية المحضرة ذات تركيب متعدد التبلور من نوع سداسي hexagonal)).مع اتجاهيه (002 ) ومن خلال قياسات ماسح القوة الذرية AFM وقياسات المجهرالالكتروني الماسح SEM تم التعرف على تاثير القواعد المستخدمة على جميع خواص الاغشية, كما تبين من نتائج التشويب ان زيادة التشويب تؤدي الى النقصان في الحجم الحبيبي حيث تناقص الحجم الحبيبي من (39.38) الى (30.22) في حالة التشويب بنسبة 3% اشتملت الرسالة دراسة الخواص البصرية لاغشية اوكسيد الزنك النقية(ZnO) والمشوبة بالالمنيوم (AZO) على دراسة طيف النفاذيه (T᷊) لاغشية المحضرة حيث بينت النتائج ان اعلى نفاذيه تم الحصول عليها هي(85%) عند الاغشية غير المشوبة بينما كانت النفاذيه للاغشية المشوبة( %80) ولمدى اطوال موجيه300 - 900)nm.) , وتبين ايضا ان الامتصاصية بشكل عام تزداد بزيادة نسب التشويب لتصل اعلى قيمة عند النسبه3% بزيادة نسبة التشويب. تم حساب فجوات الطاقة البصرية للاغشية المشوبة وغير المشوبة وتبين ان فجوة الطاقة تقل بزيادة نسبة التشويب الى ان تصل الى اقل قيمة عند نسبة التشويب (3%). وكانت فجوة الطاقة Egتتراوح من(3.3eV)الى(3.1eV) بزيادة نسب التشويب. اظهرت القياسات الكهربائية ان التوصيلية الكهربائية المستمرة تزداد بزيادة نسبة التشويب لتصل اقصى قيمة عند النسبه 3% مع زيادة نسبة التشويب . وبينت القياسات ان الاغشية كافة تمتلك طاقتين للتنشيط (Ea1) و(Ea2) تقل قيمتهما بزيادة نسبة التشويب. كما بينت خصائص( تيار - فولتيه) ان الاغشيه تمتلك عامل مثاليه (2.3) للاغشيه المرسبة على السيلكون و(1.28) للاغشيه المرسبه على السيليكون المسامي . اما خصائص التحسسية لجميع الاغشية المحضره كانت تقاس بعد تعريضها الى( (750 ppm من بخار الايثانول والميثانول عند درجة حراره 473K. النتائج العملية بينت ان اغشية اوكسيد الزنك المشوبة بالالمنيوم والمرسبة على قواعد زجاجية وشرائح من السليكون وسليكون مسامي تحسن التحسسية لتلك الاغشية لبخار الايثانول والميثانول كما تبين ان افضل نتيجة سجلت كانت لاغشية AZO/PS المشوبة بنسبة 3% حيث كانت (37%) لبخار الايثانول و(35%)لبخار الميثانول بالاضافة الى ذلك تبين ان التحسسية لها علاقة نسبية لدرجات الحرارة وكمية الغاز. | In the present work, structural, optical, electrical and sensing properties have been studied for undoped and Al doped zinc oxide (ZnO) thin films with different aluminum doping concentrations (1% and 3% ) prepared by a chemical spray pyrolysis technique, deposited on glass, silicon, and porous silicon substrate at temperature (773±10)oK with (350±10)nm thickness, The porous silicon (PS) substrates were formed by electrochemical anodization on p - type (100) silicon wafer. The X - ray diffraction technique has showed that all prepared films are polycrystalline structure type of hexagonal wurtzite with preferential orientation of plan (002) direction .Surface analysis by SEM and AFM have been used to understand the effect of the substrate on morphology properties of the samples. The doping resulted in decreasing grain size i.e deteriorates the crystallinity of the films from (39.38nm)of pure ZnO to (30.22nm) of AZO(3%) doped. The measurements of optical properties transmittance of undoped and Al doped ZnO films show that higher transmittance was (85%) for undoped ZnO films while (80 % ) for doped Al films within wavelength range (300 - 900nm). Also the results have showed that absorbance increases with doping to reach maximum value at 3% concentration .The energy gap of ZnO was calculated for undoped and doped films .It is noticed that the energy gap decreases with the increases of doping until it reaches the minimum value at 3% doping concentration . The results of electrical properties have showed that direct current (D.C) conductivity increases by increasing doping to reach maximum value at 3% doping concentration. The results have showed that the films have two activation energy Ea1 and Ea2 . from I - V characteristics it's found that the minimum ideality factors (n =2.3) for AZO/Si and (n=1.28)for AZO/PS of the prepared heterojunction are observed in the interim bias voltage range. The sensing properties for all undoped and doped films were measured after films surface was exposed to 750 ppm from vapor ethanol and methanol gas at temperature of 473ºK . The experimental results of Al doping of zinc oxide thin films with different aluminum doping concentrations (1% and 3% ) which deposited on glass, silicon, and porous silicon substrate showed a good sensitivity to ethanol and methanol vapor. Also the influence of variation of Al concentration and type substrate on ethanol and methanol vapor sensitivity of thin film sensor elements was investigated in this work. Therefore , doping percentage ZnO : Al/PS of 3% concentration recorded the best result 37% for ethanol , 35% for methanol, thus the AZO/PS films are a good sensor for ethanol and methanol vapors. In addition ,the sensitivity is directly proportional with the operation temperature for limited range. In general the sensitivity increases by increasing the concentration of ethanol and methanol vapors with increasing temperature degree

دراسة طيفية ونظرية لمشتقات النايترون Nitron == Theorettiicall and Specttroscopiic Sttudiies off Niittron Deriivattiives

Author name: صلاح محمد علي رضا
Supervisor name: زياد عدنان صالح | فريال ولي عسكر
General topic: Physics
Degree: Doctorate
Language: English
University location: Baghdad
First pages:
Abstract: The main purpose of this thesis was to perform computational investigations on Nitron compound and its derivative( Nitro - Nitron) using Density Functional Theory (DFT) at an appropriate high level of theory and comparison with experimental data, in order to get better insight into the structures and energetic features of these compounds. The DFT calculations have been performed using Gaussian 09 program with GUI(Graphical User Interface) called Gaussview 5.08. The present study is separated in three parts, in part I, optimized geometrical parameters, vibrational frequencies, electronic maximum absorption wavelength in gas phase and solvent case (chloroform), and frontier orbitals (HOMO - LUMO), electrostatic potential surface (EPS), Mullikan and Natural atomic charge distributions of 1,4 - diphenyl - 3 - (phenylammonio) - 1H - 1,2,4 - triazolium(inner salt), (C20H16N4), commonly well - known as Nitron, were calculated by using DFT/B3LYP method with 6 - 311G(d,p) basis set. The Fourier Transform - Infrared (FT - IR) solid phase spectrum of the title compound was recorded in the spectral range (4000 - 400) cm - 1. The difference between the scaled wavenumbers and the observed values of most of the vibrational modes is nearly small. The UV - Vis spectrum was measured in the spectral range (200 - 800) nm in chloroform solution. The theoretical electronic (UV - Vis) spectrum calculated using the TD - DFT(C - PCM) method with chloroform solvent is more suitable than the gas phase to the experimental spectrum. The calculated HOMO and LUMO energies show that charge transfer occurs within the molecule.In part II of this thesis, the synthesis and characterization of a novel compound, (1,4 - Diphenyl - 3 - (p - nitrophenylamino) - 1,2,4 - triazolium hydroxide inner salt (Nitro - Nitron), (C20H15N5O2) were reported. The spectroscopic investigations of the novel compound were studied by 1H NMR, FT - IR, UV/Vis techniques. The 1H NMR spectra were recorded in DMSO solution. FT - IR spectrum in solid state was observed in the region 4000 - 400 cm - 1. The UV/Vis absorption spectrum of the compound which dissolved in chloroform was recorded in the range 200 - 800 nm. The structural data, fundamental vibrational modes, 1H NMR chemical shifts, frontier orbital energies(HOMO,LUMO), electrostatic potential surface (EPS), Mullikan and Natural atomic charge distributions, and band gap energy of the compound in the ground state were calculated using density functional theory(DFT) employing B3LYP/6 - 311G(d,p) basis set. The HOMO and LUMO analysis were used to elucidate information regarding charge transfer within the molecule. Based on the optimized geometry and by using time - dependent density functional theory (TD - DFT) methods in vacuum and solution(chloroform), the allowed excitation and oscillator strengths of electronic absorption spectrum were predicted. The solvation effects have been included by means of the conductor - like polarizable continuum model CPCM. chemical shifts were calculated using the Gauge - Independent Ato mic Orbital (GIOAO) method. In part III, The results of Hall effect and D.C electrical conductivity studies of the Nitron and its derivative (Nitro - Nitron) compounds are described in this part. The temperature dependence of semi - conductivity is also described. The values of carriers concentration, mobility, conductivity, resistivity, Hall coefficient, and thermal activation energy, are also presented.Finally, a comparison between the experimental data and the calculated results of three parts of this thesis appeared a good agreement