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استخدام اغشية اوكسيد الخارصين (ZnO) الرقيقة في متحسس لتركيز الهيدروجين من نوع ترانزستور تاثير المجال ممدود البوابة == Zinc Oxide Thin Films - Based Extended - Gate Field - Effect Transistor (EGFET) As Ph Sensor
Author name:
علي عزام عبد اللطيف
Supervisor name:
رعد حمدان ظاهر | غصون محسن علي
General topic:
Electrical, Electronic and Communications Engineering
Specific topic:
Electronics and Communications Engineering
Degree:
Master
University:
Mustansiriyah University - College Of Engineering - Department Of Electrical Engineering
Language:
English
University location:
Baghdad
First pages:
34T533 - p.pdf
Abstract:
ظهر في السنوات الاخيرة اهتمام ملحوظ في استخدام متحسسات تركيز الهيدروجين (الرقم الهيدروجيني) من نوع ترانزستور تاثير المجال (FET) في التطبيقات الطبية الحيوية مثل دم الانسان, اليوريا واللعاب لان عملية تصنيع متحسسات تركيز الهيدروجين تتجه نحو التكلفة المنخفضة | In recent years, there is noteworthy interest in using pH - sensors based on Field Effect Transistor (FET) in biomedical applications such as human blood, urine, and saliva because the fabrication of pH - sensors is tending toward low cost, small size, disposable, and real - time measurement. In this work, Extended Gate Field - Effect Transistor (EGFET) pHsensors were built using thin films of Zinc Oxide (ZnO) doped with Palladium (Pd) as sensing membranes. The Pd - doped ZnO thin films with different molar concentrations (Pd = 0%, 2% and 4%) were deposited onto p - type Si(111) substrate by sol - gel method. The surface morphology of the prepared films was imaged and studied by Atomic Force Microscopy (AFM) and Scanning Electron Microscopy (SEM). The crystal structure of the fabricated films was examined by X - Ray Diffraction (XRD) test. The optical and electrical characteristics of the films were measured using spectrophotometer and Hall - Effect measurement device, respectively.The EGFET pH - sensor has been prepared by linking the fabricated sensing devices to the gate terminal of a commercial Metal - Oxide - Semiconductor Field - Effect Transistor (MOSFET CD4007UB).The fabricated sensing devices were immersed in buffer solutions with pH range of (pH 3 ? pH 11). The pH sensing characteristics of ZnO and Pd - ZnO/silicon EGFET devices were studied using Semiconductor Characterization System (SCS - Keithley 4200).The ZnO EGFET sensor exhibits voltage sensitivity and linearity of 31.5 mV/pH and 0.9809 (or 98.1%) in linear regime with pH range of (pH 3 - pH 11). The voltage sensitivity and linearity of Pd - doped ZnO (with 4% molar concentration of Pd) EGFET device in the linear regime with pH range of (pH 5 - pH 11) are 27.86 mV/pH and 0.9785 (or 97.85%), respectively. The experimental results show that the Pd - doped sensing films by sol - gel method cannot be adopted for whole pH range. This means that the doped films have fewer amounts of H+ ions sensing sites at its surface than undoped ZnO fims.
