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تصنيع كواشف ضوئية باستخدام اوكسيد التيتانيوم المطعم باوكسيد الخارصين ذو التركيب النانوي بواسطه تقنية الليزر النبضd == Fabrication of photovoltaic detectors using TiO2 doped with ZnO nanostructure by PLD technique
Author name:
ذرى طارق عباس
Supervisor name:
سمر يونس الدباغ
General topic:
Physics
Specific topic:
Solid State and Materials Physics
Degree:
Master
University:
University of Baghdad - College Of Science For Girls - Physics Department
Language:
English
University location:
Baghdad
First pages:
26T1822 - p.pdf
Abstract:
In this work, a Nd : YAG laser beam (λ=1064nm, repetition rate 6 Hz with the pulse duration 10ns) has been used to deposit thin films TiO2 pure and TiO2 doped with ZnO at different concentrations (2%, 5%, 7%) on glass and silicon substrates. The laser fluence is kept at 700 mJ/cm2 and the pressure is kept at 10 - 2 mbar to specify the optimum condition of deposition. TiO2 - ZnO thin films are investigated by using different techniques such as X - Ray Diffraction (XRD), Atomic Force Microscope (AFM), UV - VIS transmittance spectroscopy, Hall Effect and detector properties equipment.X - Ray Diffraction (XRD) results showed that by increasing ZnO concentration and annealing temperature (500°C) TiO2 transformed from amorphous structure to polycrystalline structure. AFM results showed that the RMS and the grain size was increased with increasing the concentration of zinc oxide. The root mean square (RMS) reachs to 15.2 nm at room temperature and after annealing temperature at 500°C reachs to 16.1nm. Also, the grain size increased with increasing ZnO concentration up to (100.12) nm at the concentration 7% after annealing temperature. UV - VIS transmittance measurements show that the transmittance were high in infrared region and decreases with increasing ZnO concentration and after annealing. Hall Effect is studied to estimate the type of carriers. From the results it was deduced that all (TiO2 : ZnO) films were n - type. As a result, it has been found that film structure and properties are dependent on annealing , as well as different concentrations.From the (I - V) measurements by using UV laser diode with a wavelength (385nm) found that the responsivity of the detector increased at concentration 7% reach to (3.39)A/W and after annealing in temperature 500°C reach (3.82)A/W.
