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تحضير وتوصيف المادة الكهروحرارية ZnxBi2 - xTe3 == Preparation and Characterization of ZnxBi2 - xTe3 Thermoelectric Material
Author name:
منال عبد الواحد عبود
Supervisor name:
عماد خضير عباس | علي مطشر موسى
General topic:
Physics
Specific topic:
Physics
Degree:
Doctorate
University:
Al-Nahrain University - College Of Science - Physics Department
Language:
English
University location:
Baghdad
First pages:
26T1717 - p.pdf
Abstract:
In this project we constructed a DC sputtering system for thepreparation of BiR2RTeR3R (Bismuth Telluride) thin films. BiR2RTeR3R and itsZnRxRBiR2 - xRTeR3R alloys which were prepared in this work by solid solutionas bulk samples and by D.C. sputter as thin film samples. Bothsamples are characterized by X - ray Diffraction Pattern (XRD) and byGrazing Incident Small Angle X - ray Scattering (GISAXS) for thinfilms that have small thickness less than 100 nm. Thin films sampleswere prepared under different deposition conditions (differentdeposition time, different pressure, different voltages and differentelectrodes distance). (XRD) and (GISAXS) results showed that theprepared BiR2RTeR3 Rwas polycrystalline and has high direction at (015)plane in 2????=27.37 ͦ while its alloys at (0015) in 2????=45.12 ͦ and theintensity of the peak increase by increasing Zn amount indicateincrease this plane density. For thin films the (XRD) results show thatthin film prepared under deposition conditions of (0.06 mbar, 900volt, 1 hour, 100 mA and 1cm electrodes spacing distance) areamorphous at thickness less than 200 nanometer and polycrystalline ifthe thickness increases more than 250 nm. A shift in planes presenceis due to the creation of (ZnTe) compound and increase in grain size.Atomic Force Microscopy (AFM) was used to estimate the average grain size of thin film prepared, results showed different average grain sizes depending on the system type and system parameters, also depending on the target composition. DC sputtering system showed lesser average diameter and high roughness that indicates DC sputtering system is suitable for long time deposition high efficiency TE thin film. To investigate the structure of samples Scan Electron Microscopy (SEM) was used and High Resolution Transmission Electron Microscopy (HRTEM) to evaluate the nano inclusion of solid solution.Thickness of some sample was examined by SEM technique where thicknesses of 23 nm, 46 nm and others are estimated. HRTEM Techniques are used to identify the shape of the low dimensions structure produced in the project. It is found that there are particles size with diameter rang about (66 - 107 nm) having uncontrolled shapes and size which were discovered in samples besides nano inclusions of Zn and ZnTe phase.Thermoelectric properties (Seebeck, power factor, conductivity and figure of merit) of all samples (bulk, thin films) were tested .The results show that the maximum Seebeck coefficient for Bi2Te3 as a bulk is (67.02 μV/K) at T=373 ͦ K while adding Zn enhance this value to (123.96 μV/K) at 363 for Zn0.1Bi1.9Te3 and (224.6 μV/K) for Zn0.2Bi1.8Te3 at 348 K and (189.6 μV/K) for Zn0.3Bi1.7Te3 at348 K. on other hand the thin films prepared have larger thermoelectric properties i.e. high seebeck coefficient, high power factor, high electrical conductivity and high figure of merit for all four alloys.
