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تضمين البرم في ليزرات اشباه الموصلات (ليزرات البرم) == Spin Modulation in Semiconductor Lasers (Spin lasers
Author name:
ضیاء جبار عكوش
Supervisor name:
حسن عبد الله سلطان
General topic:
Physics
Specific topic:
Laser Physics and Electro-optics
Degree:
Master
University:
University Of Basrah - College Of Education For Pure Sciences
Language:
Arabic
University location:
Basrah
First pages:
26T1680 - p.pdf
Abstract:
The introducing of electronic spin with its charge is the key of many applications which uses the electrical and magnetic properties of the electron , (spintronics )and semiconductor lasers.This concept gives led to the newest type of semiconductor lasers called ( Spin Lasers ).In the present thesis a numerical study of the effect of the carriers spin on the semiconductor lasers described by VCSEL using Matlab and Runge - Kutta method .The study includes the effect of the spin polarization in terms of the polarization injection and the injection current also to find the two thresholds of right polarized light circularly and the left circularly polarized one.The effect of the spin relaxation time on the dynamics of spin - VCSEL such as the steady state time evolution and direct modulation of the injection current and the polarization injection were studied also is presented too.The study shows that the spin VCSEL strongly affected by the injection current , polarization injection and spin relaxation time.The present results show that the laser threshold can reduced to quarter than that of conventional laser.
