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النمذجة التحليلة لاداء الثنائي الضوئي p - i - n == Analytical Modeling Of A P - I - N Photodiode Performance
Author name:
محمد شهاب احمد
Supervisor name:
منیر عبود ھاشم
General topic:
Electrical, Electronic and Communications Engineering
Specific topic:
Electronics and Communications Engineering
Degree:
Master
University:
Mustansiriyah University - College Of Engineering - Department Of Electrical Engineering
Language:
English
University location:
Baghdad
First pages:
34T538 - p.pdf
Abstract:
The analysis of a silicon p - i - n photodiode with a uniform doping concentration in each layer is presented. The theoretical treatment aims at investigating the device operation and performance to obtain optimum values of photodiode parameters when operates as a photodetector.Large bandwidth, good responsivity, device speed and quantum efficiency at wavelength of interest, combined with its low operating voltage and capability, make this diode promising for optoelectronic receiver circuits for use in optical communication systems and computer interconnections.High speed silicon p - i - n photodiode which operate at 700 nm wavelength is reported. By using a reverse bias voltage to control electric field, a high quantum efficiency of 80% is attained corresponding to bandwidth of 6.5 GHz at depletion width of 5.36 ?m and biasing voltage of 27.5 V. The minimum detectable incident light signal power is 3.9 ?W corresponding to signal to noise ratio of 6.5*104. The results show that, there is trade - off between quantum efficiency and bandwidth. Since the intrinsic layer of a p - i - n photodiode can be made with a lightly doping concentration, a p - ? - n photodiode is also treated mathematically with a software tool, and the results obtained are very close to those for a p - i - n photodiode. The results are achieved with the aid of MATLAB programming tool version 8.1.0.604 (R2013a).
