حسبة كثافة الحالات الالكترونية للسطح في تفاعل الايونات البطيئة مع سطوح المعادن والاغشية الرقيقة == Calculation of surface density of states in slow ion interaction with metal surfaces and thin films
Author name:
علاء عادل شنيف الغزي
Supervisor name:
طالب عبد النبي سلمان
General topic:
Physics
Specific topic:
Electronics Physics
Degree:
Master
University:
University Of Basrah - College Of Science
Language:
Arabic
University location:
Basrah
First pages:
26T1682 - p.pdf
Abstract:
This study included in using a theoretical model that already made to calculate the probability of the electronic Emission from the surfaces of Metals as a result of helium ion scattering at these surfaces , the ions motion is at the direction of the surface and depends on the atomic level broadening and the emitted electrons spectrum , also on probability of neutrality or survival of the ion , to initiate the theoretical model to calculate the electronic density of states of the surfaces of metals and thin films using experimental data of previews studies of the Auger neutralization spectrum for this surface .From the experimental data we calculate the Auger transform , , considering the electronic density of states in the valence band to the surface as convolution forming to Auger transform and by using fourier,s transformations we get the electronic density of states at the surfaces of Nickel Ni, Copper Cu, Aluminum Al and tungsten W and for same thin film such of MgO , MgCaO, MgSrO.
