درجة الحرارة المميزة وطاقة الاثارة الدنيا لليزر النقطة الكمية الشبه الموصل == Characteristic Temperature and Lowest Excitation Energy of Semiconductor QD laser
Author name:
غيث منور علي
Supervisor name:
رائد محمد حسن
General topic:
Physics
Specific topic:
Laser Physics and Electro-optics
Degree:
Master
University:
University Of Basrah - College Of Education For Pure Sciences
Language:
Arabic
University location:
Basrah
First pages:
26T1700 - p.pdf
Abstract:
In this work, we have studied important theoretical relationships in Semiconductor Quantum Dot Laser (QDL) Characteristics.The study is based on theoretical model equations that are derived from the rate equations. The equations were applied on experimental parameters of continuous - wave QDL GaInP/InP at 1.55μm wavelength to get theoretical simulation of the characteristics of this laser type.We also studied the temperature effect on the internal losses and the impact of these losses in determining the characteristics of the temperature of QD. The results were presented within two cases; the first is when there are no internal absorption losses and the second where there is no existence of these losses. Also, we studied the effect of ambient temperature on the characteristics of temperature for each of QD and OCL.The lowest excitation energy of QD has been studied in two control cases : with surface density of QD and with cross - section of internal losses.Throughout changing many systems and control parameters, the effects of these parameters have been studied according to the different kinds of relationships. In this research, we have studied the parameters : Surface density of QD, mean size of QD, optical confinement layer, radiative constant for OCL material, spontaneous radiative recombination time, root mean square of QD size fluctuations, cavity length and mirrors reflectivity.Some of the results in this work were compared with other experimental results of other researchers who applied the QDL model and showed a good matching.
