حساب كثافة الحاملات في طبقة الحصر البصري واشغال الحاملات المحصورة في منظومة ليزر النقطة الكمية نوع GaInAsP/InP == Calculating the Carrier Density in OCL and Confined Carrier Occupation in Quantum Dot Laser System Type GaInAsP/InP
Author name:
ایمان ذیاب شرشاب
Supervisor name:
رائد محمد حسن
General topic:
Physics
Specific topic:
Laser Physics and Electro-optics
Degree:
Master
University:
University Of Basrah - College Of Education For Pure Sciences
Language:
Arabic
University location:
Basrah
First pages:
26T1696 - p.pdf
Abstract:
In this work, we have studied many control parameters effect which plays an important role to determine the density concentration of carriers in the Quantum Dot Laser (QDL) system. Our study is based on theoretical model equations which derived from the rate equations. The equations were applied to the GaInAsP/InP QDL with wavelength 1.55μm. We produce a theoretical simulation and analytical solution of the equations by a Mathematical program.Theoretical equations are used to study the effect the parameters by controlling the value of each : the carrier's density and occupancy of the Level of a carrier confined in a QD. There are two cases : when the cross - section of the internal absorption losses has a influential amount and a nather it case when approaching zero border. As well as, we study the impact of the parameters on the threshold current density and its compounds. In addition, we study the role of these parameter to determining the maximum temperature of QDL operation through effect on temperature rang of the system.The temperature effects on the carriers’ activities in the system are studied, whereas the characteristics temperature of QDL has been studied in the two cases : with / without internal losses.The effects of structure and control parameters are applied to Study many factors. Such as : surface density of QD, mean size of QDs, optical confinement layer, spontaneous radioactive recombination time and resonator losses.
