تصميم مضخمات قدرة راديوية التردد بتقنية CMOS مع محولات جامعة للقدرة == Design of RF Power Amplifiers With Power Combining Transformers
Author name:
سهاد حسين جاسم
Supervisor name:
احمد سعدون عز الدين
General topic:
Electrical, Electronic and Communications Engineering
Specific topic:
Electronic Engineering
Degree:
Master
University:
University of Technology - Electrical Engineering Department - Electronic Engineering Branch
Language:
English
University location:
Baghdad
First pages:
34T475 - p.pdf
Abstract:
باستخدام تقنية CMOS، تواجه تكامل مضخمات القدرة العديد من التحديات بمستوى الواط والمستخدمة لتطبيقات الاتصالات اللاسلكية. وللتغلب على هذه المحددات، يمكن استخدام عدد من الوسائل واطئة الفولتية ودمجها بكفاءة باستخدام المحولات على الرقاقة لزيادة قدرة الخرج النا | In CMOS technology, many challenges face the integrated watt level power amplifiers (PAs) used in wireless applications. Consequently, to overcome these limits, several low voltage devices should be combined efficiently with on - chip transformers in order to increase the resulting output power. In this work, two high - performance Radio - Frequency (RF) power amplifiers for watt level applications are designed and simulated in deep submicron (0.13 µm) CMOS process technology using “Agilent Advanced Design System ADS 2011.10 with “BSIM4” as a simulation module for Metal - Oxide - Semiconductor Field - Effect Transistor (MOSFET) devices. The design includes a comparison for the conventional transformer combining techniques SCT, PCT and the hybrid type PSCT. The amplifiers incorporate a parallel combination of four differential PA cores to generate high output power with good efficiency and linearity. The first part of the work presents a design for a watt - level class - AB power amplifier based on transformer type power combiner PSCT for WLAN applications. The PA delivers an Output Power (Pout) of 30 dBm, Power Gain (Gp) of 30 dB and 40% Power Added Efficiency (PAE) under 2.5 V supply. In the second part of the work, a class - E PA based on transformer type power combiner PSCT is designed. The power amplifier provides an output power of 30 dBm, power gain of 30 dB, and 54% PAE at 2.45 GHz under 1.6 V supply. Finally, in the third part of this work, an on - chip output transformer layout for the proposed power amplifiers is designed and simulated with momentum RF EM simulator of ADS 2011.10 in order to realize a fully integrated power amplifier. The simulated efficiency of the PSCT was 78% with minimum insertion losses (ILmin) 0.87 dB.
