نموذج تمثيل ثنائي الابعاد لنبائط AlGaN/GaN لترانزستور ذي الكترونات ناقلة عالية السرعة == Two - Dimensional Device Simulation Of AlGaN/GaN High Electron Mobility Transistor (HEMT)
Author name:
ياسر محمد علي العبيدي
Supervisor name:
رعد سامي فياض
General topic:
Electrical, Electronic and Communications Engineering
Specific topic:
Electronic Engineering
Degree:
Master
University:
Al-Nahrain University - College Of Engineering
Language:
English
University location:
Baghdad
First pages:
34T54 - p.pdf
