تحضير جسيمات اوكسيد الخارصين النانوية الممزوجة بالحديد بطريقة الليزر النبضي == Synthesis of ZnO Nanoparticles Mixed with Fe Using Pulse Laser Deposition
Author name:
ايمان عكيدي مكحول
Supervisor name:
سمر يونس طه
General topic:
Physics
Specific topic:
Laser Physics and Electro-optics
Degree:
Master
University:
University of Baghdad - College Of Science For Girls - Physics Department
Language:
English
University location:
Baghdad
First pages:
26T1799 - p.pdf
Abstract:
In this work, pulsed laser deposition (PLD) technique is employed to prepare pure ZnO and ZnO mixed with Fe thin film at different concentration on glass substrate. Nd.YAG laser beam, λ=1064 nm, repetition rate 6Hz with the pulse duration 10ns has been used to deposited ZnO and ZnO : Fe thin films under vacuum of 10 - 2mbar. The effects of the number of laser pulses (100,300,600 and 800), Fe concentration (3,5,7%wt) at ambient temperature and annealing temperature at 500ºC on the structure, optical and electrical properties of these films have been studied.The structure characteristic investigated by X - Ray Diffraction (XRD). XRD pattern showed that as number of laser pulses increase the structure changed from amorphous to polycrystalline at 800 laser pulses for pure ZnO. For ZnO : Fe(3%) the structure stay polycrystalline and the intensity increased also the grain size increase. Same result obtained as the concentration of Fe increased (3,5and 7%) for ZnO : Fe thin films and after annealing.The morphology is analyzed by AFM technique. The AFM results showed that the Root Mean Square (RMS) of surface roughness is increased with increasing number of laser pulses from 5.96 nm to7.16 nm and from 3.23nm to 10.2nm for both films of pure ZnO and ZnO : 3%Fe respectively. The RMS for both surfaces were increased at the pulses range 4.15nm to 8.55nm when increasing Fe concentration at ambient temperature and conducted by annealing process.The optical properties measured by UV - VIS spectrometer to compute the band gap of pure ZnO and ZnO : Fe were found high transparent in the visible region band gap for ZnO and ZnO : 3%Fe were decreased from 3.13 eV to 2.9eV and from 2.8eV to 2.55eV respectively. As well as the energy gap was found severe reducing in its values when the Fe increased, where the energy gap suffer decreased and became 3.02eV to 2.52 eV at ambient temperature and from 3.15 eV to 2.7eV after performed annealing process.The hall effect measurement proves that the pure ZnO and ZnO : Fe are n - type semiconductor, the conductivity is increased by increasing mixing Fe concentration where the value was increased from 6.4X10 - 4 Ω. - 1cm. - 1 to 6.37 Ω. - 1cm. - 1 and from 1.97X10 - 5 Ω. - 1cm. - 1 to 5.207 Ω. - 1cm. - 1 when achieved annealing at 500ºC.
